| 摘要 |
PURPOSE:In the titled method, to prevent precipitation of silicon carbide on one side of silicon crystal, by using a pair of dies consisting of graphites having different thermal conductivity, respectively. CONSTITUTION:A pair of dies 4a'' and 4b'' are set in the silicon melt 3 in a crucible, seed crystal is brought into contact with the silicon melt 3 which rised in the slits of the dies by capillary phenomena, and it is pulled up under a given condition to form the silicon ribbon crystal 5. A pair of the dies used in the above-mentioned method consist of the die 4a'' (having higher thermal conductivity in the Q1 direction) made of a material obtained by cutting pyrolytic graphite in the direction perpendicular to the deposition face 7 and the die 4b'' (having higher thermal conductivity in the Q2 direction) made of a material obtained by cutting it in the direction parallel to the deposition face. Consequently, the tip part of the die 4a'' has a lower temperature than that of the tip part of the die 4b'' (the solid-liquid interface 6''), so that silicon carbide particles are attached only to the die 4a'' side of the silicon ribbon crystal 5. |
