| 摘要 |
An exhaust gas sensor including a compound ASnO3- delta wherein A is Ba, Ra, Sr or Ca to make use of the variation of resistance value of the compound. BaSnO3- delta and RaSnO3- delta are n-type semiconductors, while SrSnO3- delta and CaSnO3- delta exhibit the behavior of n-type semiconductors at the point of equivalence and the behavior of p-type semiconductors in the lean burn region. The compound ASnO3- delta is prepared by reacting an alkaline earth with SnO2. |
