| 摘要 |
PURPOSE:To obtain the thermoelectric converting element having a mechanically high strength by laminating thin films of an alloy consisting of N and P-type semiconductors respectively on both sides of the heat-resistant insulator whose thermal expansion coefficiency is almost equal to that of a converting element and sandwiching the laminated body from both sides with the sintered plates of N and P-type semiconductor powder consisting of the same compositions. CONSTITUTION:The upper part of the heat-resistant insulating plate alumina ceramic 1 consisting of a square thin plate is cut and a nickel plate 2 of the same shape as the cutout is engaged there. On both sides of the insulating plate in which the nickel is engaged, a thin strip 3 of N-type semiconductor (FeCo)Si2 and a thin strip 4 of P-type semiconductor (FeMn)Si2 are laminated with the same widths as the nickel plate by spattering. This laminated body is sandwiched by the sintered plates (FeCo)Si2 5 and (FeMn)Si2 6 of N and P-type semiconductors and this sandwich plate is heated in a vacuum. |
