发明名称 DRY ETCHING METHOD
摘要 PURPOSE:To realize micro-miniature processing in the order of 0.25mum or less without giving any damage on elements by using electron beam and selecting an acceleration voltage so that a secondary electron emission efficiency of sample becomes 1. CONSTITUTION:An exhaustion system comprises an oil diffusion pump 6 and an oil rotary pump 7, a gas supply system is composed of three sub-systems comprising the CF4 line 8, H2 line 9 and N2 purge line 10 and an X-Y stage 5 is provided with a pipe 11 for water cooling through circulation of cooled water in view of attracting the gas to the sample surface. An electron beam lens mount 12 is a modified SEM, which emits electron beam through thermal emission of tungsten filament 13. The electron optical system is composed of three stages and a lens of the final stage decelerates the electron beam and defocuses. A sample is put into this apparatus, the interior is exhausted by a vacuum pump, the CF4 is then supplied and a pressure is controlled by a main valve 13. Next, SiO2 is emitted with electron beam in acceleration voltage so that the secondary electron emission efficiency becomes almost 1.
申请公布号 JPS61203642(A) 申请公布日期 1986.09.09
申请号 JP19850043635 申请日期 1985.03.07
申请人 TOSHIBA CORP 发明人 ARIKADO TSUNETOSHI
分类号 H01L21/302;H01L21/3065;(IPC1-7):H01L21/302 主分类号 H01L21/302
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