| 摘要 |
PURPOSE:To obtain an image with higher resolution and clearness by a method wherein a light-receiving window is provided on the surface electrode of a photo-electric element, and the difference between the photo-current and the dark-current is taken out as an image signal so that an image signal is obtained only from the picture element on which light is shines, and the dark current portion is removed. CONSTITUTION:A surface electrode 2 that is provided on the light incident side of a semiconductor substrate 1 consisting of crystaline silicon as a photo- conductive substance has a light-receiving window 7 at the middle part. However, a surface electrode 21 provided at the end does not have a light-receiving window. Bias is applied on the semiconductor substrate 1 from a power source 8. An FET 4 connected to each surface electrode 2 is closed in turn with the pulse fed from a scanning pulse generator circuit 5, and also an FET 41 connected to the electrode 21 is closed so that the photo-current flowing between the electrodes 2 and 3 of the picture elements closed and the dark current flowing between the electrode 21 and its counter electrode 31 are fed into a differential amplifier 9. |
