| 摘要 |
PURPOSE:To enable the formation of an epitaxial layer of high density without causing any facet, by a method wherein a slope descending at an angle of 50 deg. to 80 deg. is given to the side wall of an opening which is provided selectively on the surface of a semiconductor substrate and in which the epitaxial layer is formed. CONSTITUTION:Oxide films 2, 2' for isolation are formed on a single-crystal semiconductor substrate 1, and the part of the oxide film in a region for a selective epitaxial growth is removed. On the occasion, a slanting angle theta of 50 deg. to 80 deg. is given to the side walls 3, 3' of the oxide films for isolation. When this slanting angle theta is small, no facet is caused. When too small, it does not suit high integration. The slanting angle theta of this degree causes substantially no facet. By forming a selective epitaxial layer 4 on this substrate, a facet-free smooth semiconductor substrate can be obtained. The same effect can be obtained by giving a slope to a side wall even in the case when an opening is provided by etching a single-crystal semiconductor substrate itself, an insulating substance is formed on the side wall of the opening and a selective epitaxial layer is formed only in the opening. |
