| 摘要 |
PURPOSE:To dissolve the transfer loss of the charges caused by contamination, by a method wherein a two-layer construction buffer insulative film consisting of a heat-oxide film and an oxide-resistive layer is used as an insulation film for a mask material, a gate insulation film, and an insulation film of the transfer channel for charges so as not to expose the surface of a substrate. CONSTITUTION:An oxide film 22 and a silicon nitride film 23 are laminated on an N-type silicon substrate 21 to form a two-layer structure buffer film. Then, boron is ion-implanted to form a shallow P-well region 24a and a deep P-well region 24b. Then, the first N<+> layer 25 for the sensitive picture element section is formed on the P-well region 24a, and the second N<+> layer 26 for an embedded channel and a P<+> region 27 for separating the picture elements are formed on the other P-well region 24b respectively. And a field oxide film 28 is formed. Then, the first layer transfer electrodes 29a and 29b and the second layer transfer electrode 32 are formed on the nitride film 23 in the sensitive picture element region. Then, N<+> type source and drain regions 36 and 37 are formed on the P-well region 24b in the output transistor region so as to produce the desired image sensor. |
