| 摘要 |
PURPOSE:To form uniform metal film on a silicon dioxide and obtain electrode and wiring having high bonding force by adding a small amount of oxygen for a short period in the initial stage of deposition. CONSTITUTION:A SiO2 film 12 is formed in the predetermined pattern on a Si substrate 11 and an electrode window 13 is formed. Next, an intermediate layer of a metal oxide higher than single molecular layer is formed to the entire part of silicon substrate 11 by the chemical vapor growth method using the WF6 gas and H2 gas where oxygen is added only for short period of initial stage of W film formation and moreover after consumption of O2, the W film 15 is formed on the intermediate layer 14. Next, the intermediate film 14 is reduced by heat processing under reduction ambient such as 1,000 deg.C H2. Thereafter, photoetching is carried out in accordance with predetermined pattern and desired W electrode wiring 15 can be obtained through the process for selectively removing W film 15. |
