| 发明名称 |
DISPOSITIVO A SEMICONDUTTORI AVENTE UNA STRUTTURA DI CONTATTI APRESSIONE PER L'IMPIEGO IN APPLICAZIONI DI ALTA POTENZA. |
| 摘要 |
<p>Semiconductor device having pressure contact structure for high power use, in which main electrodes formed on a semiconductor chip of planar structure are in pressure contact by means of first and second electrode blocks (29, 30) connected to a package, wherein an electrode reinforcing plate (32) is interposed between said electrode (26) and electrode block (29).</p> |
| 申请公布号 |
IT8621655(D0) |
申请公布日期 |
1986.09.09 |
| 申请号 |
IT19860021655 |
申请日期 |
1986.09.09 |
| 申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
HIROYASU HAGINO |
| 分类号 |
H01L21/52;H01L21/58;H01L21/60;H01L21/603;H01L23/48;H01L29/744;(IPC1-7):H01L/ |
主分类号 |
H01L21/52 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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