发明名称 LADDNINGSPUMPKRETS FOR DRIV-MOS-TRANSISTORER MED N-KANAL
摘要 This charge pump circuit comprises a capacitor connected with a first terminal thereof to a reference voltage point through a first switch element and with a second terminal thereof to a switching section. The switching section, which is arranged between a positive supply voltage line and the ground, is controlled so as to alternately and selectively connect the second terminal of the capacitor to the positive supply and to ground. The first terminal of the capacitor is further connected to the gate of the MOS transistor to be driven. During operation the switch section is controlled so as to alternately charge the capacitor and allow transfer of the charge of the capacitor to the MOS transistor gate, thereby achieving a fast charging of the MOS transistor and a low circuit dissipation in the DC mode.
申请公布号 SE8603760(D0) 申请公布日期 1986.09.09
申请号 SE19860003760 申请日期 1986.09.09
申请人 SGS MICROELETTRONICA SPA 发明人 C * CINI;C * DIAZZI;D * ROSSI
分类号 H03K5/02;H03K5/153;H03K17/04;H03K17/0412;H03K17/042;H03K17/06;H03K17/687;H03K19/017 主分类号 H03K5/02
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