| 摘要 |
PURPOSE:To obtain a platinum silicide layer having an appointed pattern in a semiconductor with high reliability by a method wherein after a polycrystalline Si layer is removed selectively by the plasma etching method using a metal layer and a platinum layer as masks, the platinum layer, the polycrystalline layer, etc., are made to react by a heat treatment. CONSTITUTION:A polycrystalline Si layer 5 and a platinum layer 6 are prepared on the surface of a semiconductor substrate 1, a Ti-W layer 7 is formed on it by the spattering method, an Al layer 8 is formed on it by the evaporation method and the parts of layer 7, 8 at an opening part 10 are removed using a photoresist film 9 as a mask. Then the film 9 is removed, the part of layer 6 at the opening part 10 is removed using the layer 8, 7 as masks and an appearing part of layer 5 at the opening part 10 is removed by the plasma etching method using the layers 8, 7, 6 as masks. Then by performing the heat treatment, a platinum silicide layer 11 is formed by the reaction with the layers 6, 5 or the substrate 1. By this way, the platinum silicide layer having an appointed pattern can be formed even if there exists the polycrystalline Si layer. |
