| 摘要 |
<p>PURPOSE:To effect the high-quality recrystallization by preventing a warp of a wafer and generation of transition by ejecting a gas in one direction from the nozzle arranged on a surface of a wafer holder for holding a wafer so as to float the wafer and subjecting it to heating sweep. CONSTITUTION:A wafer 10 is mounted on a mount table 201 of a wafer holder 20 which is shaped into tube form in order to introduce a nitrogen gas and is composed of the mount table 201 and a crystal tube 210. The nitrogen gas is ejected from a nozzle 202 on the mount table 201 thereby floating the wafer 10 and pressing it against projections 203a and 203b to fix it. A slit 108 is arranged in order to form a zone region for high temperature and a plane region for low temperature and it allows the light from a lamp 106 to transmit more than other regions. A main plane 10a of the wafer faces the slit 108 and the nitrogen gas is introduced from an inlet 210a to float the wafer 10 from the mount table 201. Then the high-temperature region 12 sweeps over the wafer 10.</p> |
