发明名称 AMORPHOUS SEMICONDUCTOR MANUFACTURING EQUIPMENT
摘要 PURPOSE:To contrive the reduction of the decomposing generation of the powder amorphous silicon by holding an atmosphere in a vacuum tank at high temperature by heating a substrate under the condition that the vacuum tank and an introduction pipe for a material gas are provided with heaters for heating. CONSTITUTION:Heaters for heating 121, 131, 141, and 151 are arranged between the outer wall 100 and the inner wall 101 of a vacuum tank and also a material gas introduction pipe 171 is provided with a heater for heating 161, thereby effecting heating of a substrate 104, heating of the vacuum tank, heating of the introduction pipe 171 and the control of an increase of temperature. Thus the atmosphere in the vacuum tank is kept at high temperature and the reduction of decomposing generation of the powder amorphous silicon can be contrived.
申请公布号 JPS61202423(A) 申请公布日期 1986.09.08
申请号 JP19850043110 申请日期 1985.03.05
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 MORI KOSHIRO;ARITA TAKASHI;HANABUSA AKIRA;ITO ZENICHIRO
分类号 H01L31/04;H01L21/205 主分类号 H01L31/04
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