发明名称 LIQUID-PHASE EPITAXIAL GROWTH METHOD
摘要 PURPOSE:To improve the bad condition of growth due to the carry-over of an epitaxial solution by removing the epitaxial solution deposited on a substrate after the epitaxial growth by a centrifugal force by rotating a substrate holder which holds the substrate. CONSTITUTION:After the growth of a substrate 25 brought in contact with an epitaxial solution 21, a substrate holder 23 is moved downward and is separated from a solution reservoir 22. A force of a motor 27a is transmitted by a crystal bar 26a to rotate the holder 23. Then only the epitaxial solution deposited on the substrate 25 is thrown away by a centrifugal force and is contained in a waste-solution reservoir 24. Thus the bad condition of growth due to the carry-over of the epitaxial solution can be improved.
申请公布号 JPS61202425(A) 申请公布日期 1986.09.08
申请号 JP19850043041 申请日期 1985.03.05
申请人 NEC CORP 发明人 MURAKAMI TOMOKI
分类号 H01L21/208;(IPC1-7):H01L21/208 主分类号 H01L21/208
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