| 摘要 |
PURPOSE:To improve the reliability by forming a main electrode metal smaller than a barrier metal in an ohmically contacting hole to prevent it from contacting with a porous oxide film stepped portion and the surface of a substrate, thereby preventing an improper withstand voltage and a disconnection. CONSTITUTION:An oxide film 2, a passivation layer 21 and an oxide film 5 are formed on an N-type silicon semiconductor substrate 1. A base region 3 and an emitter region 4 are formed, and ohmically contacting holes 31, 41 for producing electrodes from the regions 3, 4 are further formed. The bondability between the substrate 1 and main electrodes 34, 44 are improved, a barrier metal 51 for preventing a reaction due to heat is formed, and main electrode metals 34, 44 are formed not to contact with the side walls of the holes 31, 41 and the substrate 1. |
