发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PURPOSE:To increase an effective inner logic cell region without increasing a chip area by forming a region of part of a peripheral cell in the same construction as the inner logic cell region. CONSTITUTION:A peripheral cell 12 is formed at partial region 30 above the cell 12 in the same cell as an inner logic cell 11. An inner logic cell 21 is disposed on the upper region of an unused peripheral cell 33a not used as an input/output buffer. Accordingly, a new inner logic block is disposed on a vacant cell region 61 in which the block 21 is moved. Thus, effective inner logic cell region is increased.
申请公布号 JPS61202450(A) 申请公布日期 1986.09.08
申请号 JP19850043057 申请日期 1985.03.05
申请人 NEC CORP 发明人 KOYADA HIROSHI
分类号 H01L21/82;H01L27/118;(IPC1-7):H01L21/82 主分类号 H01L21/82
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