| 摘要 |
PURPOSE:To omit unnecessary steps by plating the surface of silicon with a metal by immersing the polycrystalline silicon forming plane in a plating solution and applying a voltage between a contact of a semiconductor substrate and an opposite electrode immersed in the plating solution. CONSTITUTION:A polysilicon layer 3 is patterned on an insulating film 2 of a semiconductor substrate 1. The silicon layer 3 is immersed in a plating solution 4 in which an electrode 5 is arranged oppositely to the silicon layer 3. A voltage is applied between a contact of the substrate 1 and the electrode 5. Thus the many steps for removing the unnecessary metallic layer parts can be omitted. |
