| 摘要 |
PURPOSE:To reduce the dimensional error of a pattern by auxiliarily emitting an electron beam in the less amount than a beam emission amount necessary to form the pattern on the prescribed region before or after the normal electron beam exposure. CONSTITUTION:A pattern forming region is selectively exposed with a charged beam 21 of 30kV or more of an accelerating voltage in the beam emission amount D0 to form a selective pattern. In this case, at least the periphery of the pattern forming region is emitted in the less amount than a beam emission amount D1 to form the pattern with charged beam 22 before, after the step or during the step. Thus, the dimensional error of the pattern can be reduced. |
