发明名称 MOLECULAR BEAM EPITAXY EQUIPMENT
摘要 PURPOSE:To heat a semiconductor substrate with excellent uniformity by a method wherein heat is generated in the conductive semiconductor substrate itself by eddy current induced by an induction coil. CONSTITUTION:When high frequency current is applied to an induction coil 21, eddy current is induced in a conductive semiconductor substrate 23 and the semiconductor substrate 23 is heated. Because the semiconductor substrate 23 is heated directly, the semiconductor crystal substrate can be heated uniformly.
申请公布号 JPS61201420(A) 申请公布日期 1986.09.06
申请号 JP19850043956 申请日期 1985.03.04
申请人 MITSUBISHI ELECTRIC CORP 发明人 KAJIKAWA YASUTOMO
分类号 H01L21/203 主分类号 H01L21/203
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