METHOD AND DEVICE FOR GROWING COMPOUND SEMICONDUCTOR SINGLE CRYSTAL

摘要

PURPOSE:To grow a long-sized single crystal having uniform composition and low defect density with good productivity by cooling the vapor of a compound semiconductor vaporized from the upper melt storage part at the lower crystal growth part to grow the single crystal from the melt zone. CONSTITUTION:A polycrystalline material is charged into the upper melt storage part 11 in a single crystal growth vessel 9 housed in a vertical electric furnace 7 and heated at a temp. above the m.p. to form a melt 13. The vapor 22 of a compd. semiconductor vaporized from the surface of the melt 13 is transported to a small bore crystal growth part 12 extending downward through the center of the storage part 11 and annealed to form a horizontal melt zone 23 having uniform thickness on the grown crystal 23. Then a constant speed moving mechanism part 10 is driven to move the whole vessel 9 in the direction as shown by the arrow 25 at constant speed. The melt is cooled to a temp. below the solid-phase line 21 and solidified in one direction from the lower end to the upper part to grow a crystal 24.