| 摘要 |
PURPOSE:To obtain a resistor, second insulating films and resistance length at pitches finer than the pitches of the layout of electrodes by using several kinds of patterns in which spaces among the second insulating films and contact windows differ. CONSTITUTION:Spaces d', d'' among insulating films 4 and contact windows 7 do not constant, and take different values. That is, a pattern A consisting of a silicon coating 2 in the same width as a previously cell-registered fundamental pattern, a contact window 7 and an electrode 8a or either of patterns B, C in which insulating films 4 in the same width as the fundamental pattern and length of DELTAL are superposed on the pattern A, the size of DELTAL is changed and spaces among the insulating films 4 and the contact windows 7 are altered is selected and arranged to an end section in the long direction of the fundamental pattern composed of a silicon coating 2 and an insulating film 4. Since resistance length is constituted by the sum of the length L of the insulating film 4 in the fundamental pattern and the length DELTAL of the insulating films 4 in variation cells, the variation cells, the size of DELTAL thereof is varied, are selected properly. Accordingly, resistance length at pitches finer than the pitches of a layout is acquired easily.
|
