PRODUCTION OF III-V COMPOUND SEMICONDUCTOR SINGLE CRYSTAL

摘要

PURPOSE:To obtain the titled high-quality single crystal by controlling the temp. distribution of the cross section of the solid-liq. boundary surface by a heating element provided below a boat contg. the melt of III-V elements. CONSTITUTION:Chemical equivalents of III-V elements are charged into a long- sized boat 1 having almost rectangular cross section and melted by energizing a heater wire 4 to form a melt M. Then the temp. distribution of the cross section of the solid-liq. boundary surface 8 is controlled by passing an electric current through a heating element 7 for controlling the temp. distribution of the cross section arranged below the boat 1. Subsequently, a solidified point of the melt M is formed at the midway by controlling the supply of the current to the heater wire 4, the solid-liq. boundary surface 8 is moved in the direction as shown by the arrow while retaining the temp. gradient formed in the length wise direction of the boat 1 and the melt is gradually crystallized and solidified from the seed crystal 2 side to grow a single crystal 9.