| 摘要 |
PURPOSE:To manufacture easily fine AlN powder by allowing aluminum halide to react with NH3 by the CVD process, then calcining the AlN powder in nonoxidizing atmosphere contg. N2 after adding a carbon source to the powder. CONSTITUTION:Aluminium halide (e.g. gaseous AlCl3) and gaseous NH3 are introduced into a CVD apparatus using saseous N2 as carrier gas and fine AlN powder is synthesized by the CVD process by proceeding the reaction at 800-1,500 deg.C. Then, a carbon source material (e.g. carbon powder) is mixed with the fine powder in order to stabilize the fine AlN powder, and the mixture is calcined at 1,500-1,800 deg.C in nonoxidizing atmosphere contg. N2. Thus, aimed high purity aluminium nitride powder is obtd. The AlN powder has low impurity contect, therefore, a sintered body having superior characteristics in heat conductivity, etc., is obtd.
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