| 摘要 |
PURPOSE:To enable anistropic etching due to large area beam, by performing the supersonic motion of a speciment with respect to a radical subjected to heat motion at about sonic speed. CONSTITUTION:The radical generated from a radical generation source 2 is supplied into a treatment chamber 1 while the specimen 6 such as the wafer arranged to a specimen stand 3 rotates at supersonic speed. As the ragical generation source 2, for example, microwave plasma discharge of fluorine gas is used and, as the specimen 6, the polycrystalline silicon of the gate material of MOSLSI is used, the number rotations of the specimen are set to 90,000/min and the rotary radius of the center specimen is set to 30cm. Whereupon, a rotary speed reaches supersonic speed of about 3,000m/sec and anisotropic etch ing is enabled and, because beam comes to large area radical beam, the surface treatment of a semiconductor can be efficiently performed.
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