| 摘要 |
PURPOSE:To realize high-linearity optical output characteristics in a low-current range by a method wherein a second clad layer is doped from the surface with a circular region left undoped, the superlattice structure of the doped activation region is converted into a mixed-crystal structure, and the surface of one of the two clad layers is used as an optical output surface. CONSTITUTION:An N-type GaAlAs clad layer 10 is provided on an N-type GaAs substrate 9 and a GaAs-AlAs superlattice activation region 11 consists of a GaAs well layer and a Ga0.8Al0.2As barrier layer. A P-type GaAlAs clad layer 12 is a second clad layer and a Zn-diffused region 14 is designed not to extend beyond an N-type Ga0.7Al0.3As layer 10 that is a first clad layer. In the diffused superlattice structure region, a hole is provided at the middle of the N-type GaAs substrate 9 converted into a mixture of GaAlAs crystals, which serves as a light-yielding surface provided with an N-type electrode 15 and P-type electrode 17. Typically, thickness will be 0.3mum for an activation lamination 11 consisting of 20 pairs of 100Angstrom -thick GaAs well layers and 50Angstrom -thick Ga0.8Al0.2As layers, 2mum for the P-type clad layer 12, and 4mum for the N-type clad layer 10. |
