| 摘要 |
PURPOSE:To contract the cell space while improving the degree of integration by a method wherein a transfer transistor coming into contact with a conductor layer of capacitor is provided on a one conductive semiconductor layer laminated on the upper part of cylindrical capacitors arranged in through holes formed in an insulating film on a conductive type substrate through the intermediary of an insulating film. CONSTITUTION:Cylindrical capacitors C are formed in through holes 23 made in a thick SiO2 insulating film 22 and then the first interlayer insulating film 27 with the first contact window 28 exposing a part of charge accumulating electrode 26 is arranged on the surface of capacitors C. Besides, a P<-> type single crystal silicon layer 29 is arranged on the first interlayer insulating film 27 above the capacitors C. Finally a transfer transistor composed of a gate oxide film 30 formed on the silicon layer 29, gate electrodes 33 comprising e.g. N<+> type polycrystalline silicon layer PC formed on the gate oxide film 30, and N<+> type region 31 to be an accumulating node coming into contact with the charge accumulating electrode 26 in the capacitors C at the first contact window 28 formed in the P<-> type single crystal silicon layer 29 and an N<+> type drain region 32 may be arranged on the P<-> type single crystal silicon layer 29. |
