| 摘要 |
PURPOSE:To decrease the leakage current and to make the current ratio, Ion: Ioff, sufficiently larger, by a method wherein the trapping layer for trapping carriers having a deep energy level is separated from the traveling region of the carriers. CONSTITUTION:An I-type polycrystalline Si region 9 is made to grow using the quartz substrate as a substrate 1 by a molecular evaporation method. Then, a polycrystalline Si layer is made to grow while gold is doped and a trapping layer 8 having a deep energy level is formed. Then, an undoped I-type polycrystalline Si layer is made to grow to form a source region 2, a channel region 3 and a drain region 4. Then, after a polycrystalline Si film is made to grow, an SiO2 film 5 is adhered to form the insulating layer. Subsequently, a polycrystalline Si film 6 for gate electrode is adhered, and the source and drain regions 2 and 4 are formed by implanting phosphorus. Subsequently, PSG films 11, Al electrodes 10 and an ITO film 12 are evaporated. By this way, the leakage current is decreased without harming the mobility of carriers in the thin film transistor, thereby enabling to obtain the TFT capable of making larger sufficiently its current ratio, Ion:Ioff, at the time of actuation and stop. |
