发明名称 FORMATION OF DEPOSITED FILM
摘要 PURPOSE:To make a large area film easily contriving the improvement of the characteristics, the film forming speed and the reproducibility of a deposited film containing nitrogen and the homogeneity of film quality, by making two kinds of active seeds formed from specific compounds separately introduced in a film forming space chemically react using discharge energy. CONSTITUTION:Under the coexistence of an active seed formed by decomposing a compound which contains carbon and a halogen and an active seed formed from a chemical material containing nitrogen for forming a film, the two are made to mutually react chemically, the reaction being caused accelerated or amplified by using discharge energy. This enables forming a film with low discharge energy and formed deposition film 12, 13 have extremely little possibility of being affected by etching or other, e.g., abnormal discharge, etc. Light energy can be irradiated on all the surface or the required area of a substrate 11 selectively or under control using an appropriate optical system and the position and the thickness of the deposition films 12, 13 can be made easily controllable.
申请公布号 JPS61199625(A) 申请公布日期 1986.09.04
申请号 JP19850038900 申请日期 1985.03.01
申请人 CANON INC 发明人 ISHIHARA SHUNICHI;ONO SHIGERU;KANAI MASAHIRO;ODA TOSHIMICHI;SHIMIZU ISAMU
分类号 C23C16/30;G03G5/08;H01L21/205;H01L31/04 主分类号 C23C16/30
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