| 摘要 |
PURPOSE:To enable the growth of a required pattern shape growth layer consist ently with other layers by growing crystals irradiating the light corresponding to the pattern shape on the surface of a semiconductor substrate or a semicon ductor layer where the crystal is to be grown. CONSTITUTION:Since the temperature of a substrate 1 is lower than the temperature appropriate for accelerating crystal growth, the activating energy for crystal growth is insufficient. In the area which is irradiated with light 10, however, the insufficient energy is supplemented with the irradiated light and the crystal growth is accelerated so the speed of crystal growth in the area which is not irradiated with the light 10 is slower than the speed of crystal growth in the area which is irradiated with the light 10. Accordingly, an active layer 3 wherein the area irradiated with the light 10 is thicker and the area not irradiated is thinner is formed on a confinement layer 2, e.g., the active layer 3 which has a period structure of diffraction grating is formed. |
