| 摘要 |
PURPOSE:To prevent the positional shift of a contact aperture by contriving the reduction of the manufacturing process, by a method wherein all contact apertures are formed at the same time in the third process. CONSTITUTION:The first contact aperture 7a is formed in a field oxide film 4 on an AS-N<+> impurity diffused layer 2 by photo etching after a resist pattern is formed on an Si substrate 1, and the second contact apertures 7b, 7c are formed in a polycrystalline Si oxide film 6 on a polycrystalline Si layer 5 containing an N<+> impurity. Next, a PSG layer 8 is formed over the whole surface of the Si substrate 1 and heat-treated, thus forming a deep N<+> impurity diffused layer 9 in the contact aperture 7a. Then, the PSG layer 8 is wholly coated with resist into a resist pattern, which is then photoetched; accordingly, the third contact apertures 10, 10... are formed at the same time in the diffused layer 9 of the first contact aperture 7a, in the diffused layer of the second contact aperture 7c, and in a P<+> impurity diffused layer 3. |
