发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To conduct connections electrically through pressure-welding by bonding an electrode for a semiconductor element and a wiring for a wiring substrate by a resin between the element and the substrate through a projecting electrode. CONSTITUTION:Cr 2 is evaporated to a substrate 1 such as a Teflon film, an insulating film 3 having inferior adhesive properties with a Teflon resin, etc. is superposed, and openings are bored 5, and projecting electrodes 4 in Au, etc. are formed. Electrodes 7 for a semiconductor element 6 and the projecting electrodes 4 are conformed, and the element 6 is pressed 9 and pressure-welded. The dispersion of the thickness of the projecting electrodes 4 is absorbed by the substrate 1 having the soft quality of materials. A resin 8 such as acrylic resin is injected between the element 6 and the substrate 1, and cured at the normal temperature or under heating by heat, beams, etc. The substrate 1 is peeled on the interface between the insulating film 3 and the resin 8, and the electrodes 4 are transferred to the electrodes 7 for the element 6. Projecting electrodes are shaped to the transfer substrate 1 again, and the substrate is used repeatedly. The projecting electrodes 4 for the element 6 are pressed 9' to a wiring 12 for a wiring substrate 11, a resin 8' is injected into a clearance and cured, and pressing 9' is removed. According to the constitution, the semiconductor element can be mounted to the wiring substrate at a low temperature.
申请公布号 JPS61198738(A) 申请公布日期 1986.09.03
申请号 JP19850039183 申请日期 1985.02.28
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 FUJIMOTO HIROAKI;HATADA KENZO
分类号 H01L21/60 主分类号 H01L21/60
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