| 摘要 |
PURPOSE:To obtain the title element of high quality and long lifetime by the blocking of injected carriers from a metallic electrode layer, by a method wherein a metallic nitride film is provided between the metallic electrode and the amorphous semiconductor. CONSTITUTION:A metallic electrode 2 of Cr or Al is formed into a desired pattern on an insulation substrate 1, and a metallic nitride film 3 is formed by plasma-nitriding the metallic electrode 2 by using a glow discharge method with nitrogen gas. Next, this film is coated with an amorphous semiconductor 4, and it is coated with a clear electrode 5, which are thus formed into a desired pattern. The electrode 2 is patterned in a comb form, and the superposition of the clear electrode 5 on the lower metallic electrode 2 serves as the sensor. |
