| 摘要 |
PURPOSE:To avoid the formation of a junction capacity between an element and an isolating region, by isolating a semiconductor-element forming part from a semiconductor substrate by an oxide film. CONSTITUTION:A protecting film 2 is formed on an Si substrate 1. The film 2 corresponding to the peripheral part of a resistor-element forming part 3 is removed, and windows 4 are formed. With the film 2 as a mask, groove parts 5 are formed in the substrate 1. An oxide film 6 is grown at the wall and the bottom of each groove part 5. Then, the film 6 at the bottom part of the groove 5 is removed. Etching is equally performed at the bottom of the groove part 5, and a deeper groove part 7 is formed beneath each groove part 5. Then, an oxide film 8 is grown around the groove parts 5 and 7. The films 8 on both sides of the part 3 are formed so that the part 3 is isolated from the other part by the film 8. Thus, the resistor element formed on the part 3 is isolated by the films 8. A P-N junction is not formed between the isolated region. |
