| 摘要 |
PURPOSE:To enable high-speed deposition of a thin film on an uneven sample and surface flattening, by providing the first magnet that impresses magnetic fields to produce magnetron discharge above the target side electrode and the second magnet to impress magnetic fields above the sample side electrode. CONSTITUTION:The first magnet 21 that impresses magnetic fields on a target 16 from its periphery to the center is installed. The bottom of the lower elec trode 13 is provided with the second magnet 22 that impresses magnetic fields on a substrate 19 from its periphery to the center. Ar gas is introduced after evacuation of a container 11, and discharge is caused by impressing high fre quency power on the upper electrode 12 and the lower electrode 13. The target 16 is sputtered with Ar ions, and a Si oxide film 33 is deposited on the substrate 19 while the surface of the substrate 19 is reversely sputtered by colliding Ar ions. When the Si film 33 is formed in this state, it becomes completely flat over the pattern of the substrate 19. |
