| 摘要 |
PURPOSE:To process an organic photo-resist finely by irradiating the photo-resist by ultraviolet rays previously or simultaneously and processing the photo-resist by 0 ions. CONSTITUTION:The upper section of an Si substrate 1 is coated with an organic photo-resist 2, and an SiO2 mask 3 is applied and ultraviolet-beams 4 are projected from a high-tension mercury arc lamp 5. An O ion current 6 is projected, and the resist 2 is processed without abnormal discharge. The mask 3 is removed through a proper method as required. Movable radicals and ions and the like are generated in an insulating organic substance layer through ultraviolet-ray irradiation, electric resistance is lowered, the extent of charging is relaxed, and the generation of high tension where dielectric breakdown is generated is inhibited, thus allowing fine processing. |
