| 摘要 |
PURPOSE:To facilitate circuit integration by leading each electrode out of one side by a method wherein the title device is put in a lateral structure that an etching groove is formed in a substrate and each operating layer is formed on its side surface. CONSTITUTION:A mask layer 12 of an SiO2 insulation film is formed on a GaAs compound semiconductor substrate 11, and a window 12a is bored. Using the mask layer 12 as the etching mask, an etching groove 13 is formed in the substrate 11. In the groove 13, an N-type GaAs semiconductor layer 14, an N-type AlGaAs semiconductor layer 15, a P-type GaAs compound semiconductor layer 16, an N-type AlGaAs semiconductor layer 17, and an N-type GaAs semiconductor layer 18 of high concentration are successively formed. Next, the mask layer 12 is removed, and a collector or emitter electrode 20 is formed on the main surface of the substrate 11, and a base electrode 21 is formed by adhesion to the upper end surface of the third P-type semiconductor layer 16. A collector or emitter electrode 22 is adhered to the side surface 13a of the groove 13 of the P-type semiconductor layer 18 of low specific resistance. |
