ELECTROSTATIC INDUCTION THYRISTOR HAVING GATES ON BOTH SURFACES AND MANUFACTURE THEREOF

摘要

PURPOSE:To manufacture an electrostatic capacity thyristor having gates on both surfaces simply, by forming epitaxially growing semiconductor layers on two growing surfaces of an N<-> type or P<-> type semiconductor substrate so that a gate region is held by the layers on each surface. CONSTITUTION:Low concentration P-type impurities are doped on an N<+> type gate region 3, and an epitaxially grown layer 5 is formed. Then high concentration N-type impurities are doped on the surface of an N<-> type epitaxially grown layer 4, and an N<+> type semiconductor region 6 is formed. High concentration P-type impurities are doped on the surface of the grown layer 5, and a P<+> type semiconductor region 7 is formed. A part of the grown layer 4 and a part of the region 6 are etched so as to expose the P<+> type gate region 2. A part of the grown layer 5 and a part of the P<+> type semiconductor region 7 are etched so that only the N<+> type gate region 3 is protruded. A cathode electrode 8 is formed on the surface of the region 6. A gate electrode 10 is formed on the surface of the P<+> type gate region. An anode electrode 9 is formed on the surface of the region 7. A gate electrode 11 is formed on the surface of the gate region.