| 摘要 |
PURPOSE:To maintain close adhesion of a photoconductive layer comparatively good, and yet to control the thickness of a barrier layer to extremely small thickness, preferably, to <=10nm by executing anodic oxidation treatment of the surface of a conductive substrate with an electrolytic voltage maintained low. CONSTITUTION:The surface of the conductive substrate 1 made of Al is anodized at a low electrolytic voltage maintained at 2-10V to form an anodized film 2 as an interface in order to form a photoconductive layer 3 in close adhesion to the surface. When below 2V, sufficient current necessary complete the anodized film in the time limit allowable for the operation does not flow, and a film good in adhesion cannot be obtained, and when above 10V, the barrier layer 2a o the film 2 exceeds 10nm in thickness in most cases. |
