| 摘要 |
PURPOSE:To device whether contamination exists or not in a diffusion furnace before executing a diffusion processing, by placing a semiconductor wafer into the diffusion furnace, executing a heat treatment without setting an impurity source, diffusing a residual impurity of the inside of the furnace to the wafer, and checking its diffusion layer. CONSTITUTION:A diffusion furnace used for manufacturing various semiconductor devices is constituted by containing a quartz pipe 20, heaters 22, 24 for surrounding it, a holder 26 for holding a semiconductor wafer 28, and a solid impurity source 30. In this case, the wafer having the same conductive type as the conductive type determined by an impurity to be diffused is placed in the diffusion furnace, and a heat treatment is executed without setting the impurity source, by which a residual impurity in the furnace is diffused to the wafer. In this state, whether a diffusion layer of an opposite conductive type determining impurity has been formed on its wafer or not is checked, and contamination of the diffusion furnace is inspected. Accordingly, independently from a diffusion processing for forming an element, whether contamination exists in the diffusion furnace or not can be decided easily in advance.
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