Semiconductor integrated circuit

摘要

Disclosed is a semiconductor integrated circuit which comprises an n-type silicon substrate, a p-type well region having an opening at a part thereof, which is formed on the surface portion of the substrate, an MOS transistor formed in the p-type region and a resistance layer extended from the drain region of the MOS transistor to the opening of the p-type well region through a insulating film formed on the surface of the substrate, in which the drain region of the MOS transistor is electrically connected to the silicon substrate through the resistance layer so that a current is supplied to the MOS transistor.