发明名称 |
Method of making dynamic memory array |
摘要 |
A dynamic read/write memory cell of the one transistor type is made by a single-level polysilicon process in which the word lines and the gates of the access transistors are formed by the metal strips. No metal-to-silicon or metal-to-polysilicon contacts are needed. The access transistors are made by etching through polysilicon strips which are the capacitor bias plates. The size of the transistor is not determined by alignment accuracy.
|
申请公布号 |
US4608751(A) |
申请公布日期 |
1986.09.02 |
申请号 |
US19840638442 |
申请日期 |
1984.08.07 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
MCELROY, DAVID J. |
分类号 |
H01L21/762;H01L21/8242;H01L23/522;H01L27/108;(IPC1-7):H01L27/04;H01L29/78 |
主分类号 |
H01L21/762 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|