发明名称 Plasma enhanced deposition of semiconductors
摘要 Semiconductor thin films are produced using plasma assisted chemical vapor deposition on alkali halide single crystal substrates. Deposition is formed at relatively low temperatures so that sublimation of the substrate is not a problem. The invention process permits at high rate deposition of high quality semiconductors.
申请公布号 US4609424(A) 申请公布日期 1986.09.02
申请号 US19850793451 申请日期 1985.10.28
申请人 UNITED TECHNOLOGIES CORPORATION 发明人 SHUSKUS, ALEXANDER J.;COWHER, MELVYN E.
分类号 C30B25/10;(IPC1-7):C30B25/10 主分类号 C30B25/10
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