| 摘要 |
PURPOSE:To contrive the fine formation and the mass production of semiconductor ICs by easily forming the LDD structure most suitable even for PMOSs by a method wherein the device and the conditions generally used in the process of semiconductor manufacture are combined with each other. CONSTITUTION:A gate oxide film 2 and a field oxide film 3 are formed on an N type Si substrate 13. After a polycrystalline Si film is formed on these films 2 and 3, a gate electrode 4 is formed by etching the polycrystalline Si film. Next, the region of the gate oxide film 2, unmasked with the gate electrode 4, is removed by etching; thus, the aperture of the Si substrate is formed. The surface of the aperture is made amorphous by Si ion implantation. Source and drain regions 10 are formed by diffusion a P type impurity boron into the amorphous region 12. After formation of an insulation film 6 such as an oxide film, the insulation film on the diffused layer is removed by etching the film 6, with an insulation film 7 left on the side wall of the gate electrode 4. Next, relatively deep diffused layers 11 are formed by implanting boron directly into the Si substrate. Then, an interlayer insulation film 9 is formed by lamination. |
