发明名称 METHOD FOR IMPLATING DIFFERENT KINDS OF ATOM INTO SOLID MATTER BY ELECTRON RAY
摘要 PURPOSE:To implant different kinds of atom into a solid material and to form a mixed layer by sticking a thin film consisting of the different kinds of atom to the solid material to make double-layered construction and irradiating prescribed electron rays thereon from the thin film side. CONSTITUTION:The thin film 2 contg. a number of atoms to be implanted into the solid material 1 is stuck to the material 1 by a method such as vacuum deposition to form the material 3 having the double-layered construction. The electron rays 4 having the energy enough to displace all the atoms in the thin film 2 are then irradiated on the material 3 under the specified conditions (intensity, incident angle and opening angle, irradiation temp. and time of the electron rays). The atoms of the electron rays collide consequently against the atoms in the film 2 to displace said atoms and the atom transfer which does not arise from thermal diffusion is induced, by which the atoms in the film 2 are implanted into the material 1 and the mixed layer is formed.
申请公布号 JPS61195972(A) 申请公布日期 1986.08.30
申请号 JP19850036614 申请日期 1985.02.27
申请人 UNIV OSAKA 发明人 FUJITA HIROSHI;TSUNODA NAOTO
分类号 C23C14/48;C23C8/10;C23C8/60;C23C10/28;C23C12/02;C23C26/00;H01L21/263 主分类号 C23C14/48
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