| 摘要 |
PURPOSE:To increase memory capacity of a chip and to realize a multi- functional memory, by overlapping a plural steps of memory circuits each comprising of N-type layers, P-type layers and electrodes on a face of a semiconductor layer. CONSTITUTION:After an oxide film 10 is grown on the surface of an N-type layer 7, it is removed partially with masking. Through the oxide film removed portions, P-type layers 8a, 8b, 8c and N-type layers 9a, 9b are formed. Next, the N-type layer and oxide film 2 over the metal electrode 5a is removed to form an opening 11. On the side wall of the opening 11, an oxide film 12 is grown, being connected with the oxide film 10 to be united. Thereafter, metal electrodes 13a, 13b, 13c and metal electrodes 14a, 14b are formed. In the same way, an oxide film 10 is coated on the entire metal electrodes 13a-13c, 14a, 14b. Next, an N-type layer of single crystalline silicon is formed thereon to constitute a third step circuit, and in the same way n-step circuits are constituted. |
