| 摘要 |
PURPOSE:To attain enlargement, improvement of productivity and mass production of the title deposited films by a method wherein an active compound (A) and another active compound (B) are separately fed to a filming space to be irradiated with photo energy. CONSTITUTION:In the coexistance of an active compound (A) produced by decomposing a germanium and halogen contained compound substituting for producing plasma in a filming space for forming the title deposited films as well as another active compound (B) produced from a nitrogen contained filming compound, the deposited films are to be formed by means of irradiating the active compounds (A) and (B) with photoenergy to make them chemical react to each other or accelerate and amplify the chemical reaction. Through these procedures, the deposited films with stable film quality may be mass-produced industrially at low cost since the filming speed may be accelerated remarkably compared with that by any conventional CVD process as well as the substrate temperature in case of forming the deposited films may be lowered considerably. |
