| 摘要 |
PURPOSE:To provide a photovoltaic device having a high conversion efficiency and high reliability, by arranging two or more P-I-N layer units on a substrate and interposing a silicon oxide or silicon nitride film between the layer units. CONSTITUTION:A substrate 1 is provided thereon with two p-i-n layer units 5 each of which consists of a P-type amorphous layer 2, an intrinsic amorphous layer 3 and an N-type amorphous layer 4, while a silicon oxide or silicon nitride film 6 having a thickness of 100 Angstrom or below is interposed between the layer units 5 and 5. The thickness of the silicon oxide or silicon nitride film 6 should be limited to 100 Angstrom or below, because either of these films is so good an insulation film that no current could be taken out if it is thicker. If it is 100 Angstrom thick or below, however, the tunnel phenomenon allows electric current to flow therethrough. Further, this film 6 prevents the interdiffusion of impurities, which improves the reliability of the device. |
