AMORPHOUS SILICON X-RAY SENSOR

摘要

PURPOSE:To provide a high output current and to make the voltage high, by arraying fluorescent material on an amorphous silicon semiconductor. CONSTITUTION:On the back face of a substrate 11 of material such as Al, Be which can transmit X-rays, a number of small area sections of fluorescent material 12 such as zinc sulfide doped with nickel are arrayed. Thin transparent conductive films 13 such as ITO or SnO2 having approximately the same shape are arrayed. Except for on a portion of each transparent conductive film 13, P-type amorphous silicon carbide semiconductor films 14, i-type amorphous silicon semiconductor films 15 and N-type amorphous silicon semiconductor films or N-type minute-crystalline silicon semiconductor films 16 are formed in turn, using a plasma decomposing method, etc. Moreover, small-area back face electrodes 17 consisting of thin film electrodes such as aluminium are formed to constitute a multi-element photo electromotive sensor, in which one end of each back face electrode 17 is connected to the exposed portion of the transparent conductive film 13 of the neighbouring element, thereby to connect the respective elements in series.