发明名称 FILM FORMING METHOD
摘要 PURPOSE:To remove thoroughly impurities on a substrate and to form a uniform film deposited by evaporation by making an auxiliary coil having a specific shape in combination with a coil for an ion bombardment treatment in the stage of improving the impurities on the substrate by the ion bombardment treatment prior to vapor deposition of a metal, etc., on the substrate under the reduced pressure. CONSTITUTION:The bowl-shaped substrate 1 is attached to a substrate attaching jig 6 in a vacuum vessel 7. Underlying films 2, 3 are preliminarily laminated on the surface of the substrate 1. The surface of the uppermost film 3 thereof is used as a surface 4 to be treated. The inside of the vessel 7 is evacuated to about 10<-1>-10<-2>Torr and a voltage is impressed to the main coil 11 and auxiliary coil 12 of the coil 9 for voltage impression to ionize the remaining air, by which the surface of the substrate 1 is subjected to the ion bombardment treatment and the impurities such as moisture and dust are removed therefrom. The shape of the coil 12 is made into the shape conforming to the shape of the surface 4 to be treated of the substrate 1, by which the impurities on the surface 4 are thoroughly removed from the entire surface. The film having the excellent adhesiveness and heat resistance is formed uniformly on the substrate 1 by the evaporation of a film material 18 when said material is irradiated by an electron beam 16 from an electron gun 14.
申请公布号 JPS61195967(A) 申请公布日期 1986.08.30
申请号 JP19850035643 申请日期 1985.02.25
申请人 MATSUSHITA ELECTRIC WORKS LTD 发明人 NOGUCHI SHINJI;FUJIMOTO KASHI
分类号 C23C14/02;C23F1/00 主分类号 C23C14/02
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