发明名称 FORMATION OF DEPOSITED FILM
摘要 PURPOSE:To improve the various characteristics, filming sped and reproducibility while stabilizing the film quality by a method wherein an active compound (A) and another active compound (B) are separately fed to a filming space to be supplied with thermal energy. CONSTITUTION:In the coexistence of an active compound (A) produced by decomposing a germanium and halogen contained compound substituting for producing plasma in a filming space for forming the title deposited films as well as another active compound (B) produced from a germanium contained filming compound, the deposited films are to be formed by means of supplying the active compounds (A) and (B) with thermal energy to make them chemical- react to each other or accelerate and amplify the chemical reaction. Through these procedures, the deposited films with stable film quality may be mass-produced industrially at low cost since the filming speed may be accelerate remarkably compared with that by any conventional CVD process as well as the substrate temperature in case of forming the deposited films may be lowered considerably.
申请公布号 JPS61196522(A) 申请公布日期 1986.08.30
申请号 JP19850036765 申请日期 1985.02.26
申请人 CANON INC 发明人 ISHIHARA SHUNICHI;ONO SHIGERU;KANAI MASAHIRO;ODA TOSHIMICHI;SHIMIZU ISAMU
分类号 C23C16/30;C23C16/22;C30B25/02;G03G5/08;H01L21/205;H01L31/04 主分类号 C23C16/30
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